The article “Integrated silicon nitride devices via inverse design”, authored by Prof. Michaël Ménard of ÉTS Montréal, is featured in the journal Nature Communications

The innovative silicon nitride (SiN) devices created by Professor Michaël Ménard’s team using reverse design techniques have been featured in the prestigious scientific journal Nature Communications, which has an impact factor of 15.7 according to the Journal Citation Report.

Prof. Ménard and his team have successfully demonstrated the relevance of this technique for significantly improving integration density while maintaining high performance on small SiN structures. Their experiments on three ultra-compact free-form silicon nitride devices—a four-channel CWDM, a five-mode MDM, and a PBS—have proven promising for the development of even more compact devices while maintaining superior passive performance, paving the way for large-scale integration.

Congratulations to the 3 authors, Julian L. Pita Ruiz, Narges Dalvand, and Michaël Ménard!

To access the article, click here: Integrated silicon nitride devices via inverse design